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2SC4296
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4296 500 400 10 10(Pulse20) 4 75(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=-0.7A VCB=10V, f=1MHz
(Ta=25C) 2SC4296 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ V V MHz pF Unit
A
V
23.00.3 9.50.2
A
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 33 IC (A) 6 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.6 IB2 (A) -1.2 ton (s) 1max tstg (s) 3max tf (s) 0.5max
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
10
1.2 A
1A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) 1.4 (I C/ I B= 5)
IC - V BE Temperature Characteristics (Typical)
10 (VCE=4V)
8 Collector Current I C (A)
600 mA
8 1 Collector Current I C (A)
6
400mA
6
mp )
V B E( sat)
emp
)
se T
(Ca
(Ca
25C
125
IB=100 mA
2
2
V C E( sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2
0
0
1
2
3
4
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 100 10
j - a( C/W)
hFE - IC Characteristics (Typical)
ton*t s t g*t f( s)
t on* t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
3
50
25C
-55C
VCC 200V I C: I B 1: -I B2= 10:1:2 1 0.5 tf 0.1 0.1 0.5 1 5 10 ton
Transient Thermal Resistance
DC C urrent G ain h FE
125C
5
tstg
Sw it ching Time
1
10
0.5
5 0.02
0.05
0.1
0.5
1
5
10
0.3
1
10 Time t(ms)
100
-55C
(Cas
C
e Te
se
4
200m A
4
mp)
Te
3.0
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
30
1m s
Reverse Bias Safe Operating Area
30 80
P c - T a Derating
50
10
m
5 Collect or Cur ren t I C( A)
s
5 Collect or Cur re nt I C( A)
Ma xim um Powe r Dissipat io n P C( W)
10
10
s
0
s
10
60
W ith In fin ite
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
he
40
at si nk
0.1 0.05 0.02 5
Without Heatsink Natural Cooling
0.1 0.05 0.02 5
20
10
50
100
500
10
50
100
500
3.5 0
Without Heatsink 0 50 100 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
94

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